Self-assembled quantum dots: A study of strain energy and intersubband transitions
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Abstract
In this article we examine the strain energy and intersubband optical transitions in self-assembled dots on GaAs and InP substrates. On the GaAs substrate, in addition to the InAs/GaAs dots we examine strain compensated InAs/GaAsP dots on GaAs substrates. We find that the strain energy configuration profile shows that there is preference for certain dot sizes and shapes. Our calculated dot sizes agree well with experimental observations. We find that the addition of phosphorus in the covering matrix reduces the total strain energy of the system with little effects on the intersubband transition strength for the vertical incident light. The reduced strain energy should allow one to incorporate a large number of dot array stacks for devices such as lasers and detectors and thus increases the optical responses. Our studies for the InAs/InP system show that due to the lower strain mismatch there is no particular preference for dot sizes. The optical response for intersubband transitions is weaker and occurs at longer wavelengths in comparison to the InAs/GaAs dots. © 2002 American Institute of Physics.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Self-assembled quantum dots: A study of strain energy and intersubband transitions</title><author><name sortKey="Lin, Yih Yin" uniqKey="Lin Y">Yih-Yin Lin</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109-2122</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Michigan</region></placeName><wicri:cityArea>Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor</wicri:cityArea></affiliation></author><author><name sortKey="Singh, Jasprit" uniqKey="Singh J">Jasprit Singh</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109-2122</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Michigan</region></placeName><wicri:cityArea>Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">02-0539448</idno><date when="2002-11-15">2002-11-15</date><idno type="stanalyst">PASCAL 02-0539448 AIP</idno><idno type="RBID">Pascal:02-0539448</idno><idno type="wicri:Area/Main/Corpus">00E494</idno><idno type="wicri:Area/Main/Repository">00DC72</idno></publicationStmt><seriesStmt><idno type="ISSN">0021-8979</idno><title level="j" type="abbreviated">J. appl. phys.</title><title level="j" type="main">Journal of applied physics</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Conduction bands</term><term>Experimental study</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Infrared spectra</term><term>Internal stresses</term><term>Photoluminescence</term><term>Self-assembly</term><term>Semiconductor quantum dots</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>6865H</term><term>7867H</term><term>7321L</term><term>8107T</term><term>7855C</term><term>7830F</term><term>Etude expérimentale</term><term>Indium composé</term><term>Point quantique semiconducteur</term><term>Contrainte interne</term><term>Semiconducteur III-V</term><term>Photoluminescence</term><term>Spectre IR</term><term>Bande conduction</term><term>Autoassemblage</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">In this article we examine the strain energy and intersubband optical transitions in self-assembled dots on GaAs and InP substrates. On the GaAs substrate, in addition to the InAs/GaAs dots we examine strain compensated InAs/GaAsP dots on GaAs substrates. We find that the strain energy configuration profile shows that there is preference for certain dot sizes and shapes. Our calculated dot sizes agree well with experimental observations. We find that the addition of phosphorus in the covering matrix reduces the total strain energy of the system with little effects on the intersubband transition strength for the vertical incident light. The reduced strain energy should allow one to incorporate a large number of dot array stacks for devices such as lasers and detectors and thus increases the optical responses. Our studies for the InAs/InP system show that due to the lower strain mismatch there is no particular preference for dot sizes. The optical response for intersubband transitions is weaker and occurs at longer wavelengths in comparison to the InAs/GaAs dots. © 2002 American Institute of Physics.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0021-8979</s0></fA01><fA02 i1="01"><s0>JAPIAU</s0></fA02><fA03 i2="1"><s0>J. appl. phys.</s0></fA03><fA05><s2>92</s2></fA05><fA06><s2>10</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Self-assembled quantum dots: A study of strain energy and intersubband transitions</s1></fA08><fA11 i1="01" i2="1"><s1>LIN (Yih-Yin)</s1></fA11><fA11 i1="02" i2="1"><s1>SINGH (Jasprit)</s1></fA11><fA14 i1="01"><s1>Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109-2122</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ></fA14><fA20><s1>6205-6210</s1></fA20><fA21><s1>2002-11-15</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>126</s2></fA43><fA44><s0>8100</s0><s1>© 2002 American Institute of Physics. 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